199 lines
7.6 KiB
C
199 lines
7.6 KiB
C
/*
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* This file is part of the Micro Python project, http://micropython.org/
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*
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* The MIT License (MIT)
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*
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* Copyright (c) 2013, 2014 Damien P. George
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*
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* Permission is hereby granted, free of charge, to any person obtaining a copy
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* of this software and associated documentation files (the "Software"), to deal
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* in the Software without restriction, including without limitation the rights
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* to use, copy, modify, merge, publish, distribute, sublicense, and/or sell
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* copies of the Software, and to permit persons to whom the Software is
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* furnished to do so, subject to the following conditions:
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*
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* The above copyright notice and this permission notice shall be included in
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* all copies or substantial portions of the Software.
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*
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* THE SOFTWARE IS PROVIDED "AS IS", WITHOUT WARRANTY OF ANY KIND, EXPRESS OR
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* IMPLIED, INCLUDING BUT NOT LIMITED TO THE WARRANTIES OF MERCHANTABILITY,
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* FITNESS FOR A PARTICULAR PURPOSE AND NONINFRINGEMENT. IN NO EVENT SHALL THE
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* AUTHORS OR COPYRIGHT HOLDERS BE LIABLE FOR ANY CLAIM, DAMAGES OR OTHER
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* LIABILITY, WHETHER IN AN ACTION OF CONTRACT, TORT OR OTHERWISE, ARISING FROM,
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* OUT OF OR IN CONNECTION WITH THE SOFTWARE OR THE USE OR OTHER DEALINGS IN
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* THE SOFTWARE.
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*/
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#include <stm32f4xx_hal.h>
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#include "flash.h"
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/* Base address of the Flash sectors */
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#define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) /* Base @ of Sector 0, 16 Kbytes */
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#define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) /* Base @ of Sector 1, 16 Kbytes */
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#define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) /* Base @ of Sector 2, 16 Kbytes */
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#define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) /* Base @ of Sector 3, 16 Kbytes */
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#define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) /* Base @ of Sector 4, 64 Kbytes */
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#define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) /* Base @ of Sector 5, 128 Kbytes */
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#define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) /* Base @ of Sector 6, 128 Kbytes */
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#define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) /* Base @ of Sector 7, 128 Kbytes */
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#if defined(FLASH_SECTOR_8)
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#define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08080000) /* Base @ of Sector 8, 128 Kbytes */
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#define ADDR_FLASH_SECTOR_9 ((uint32_t)0x080A0000) /* Base @ of Sector 9, 128 Kbytes */
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#define ADDR_FLASH_SECTOR_10 ((uint32_t)0x080C0000) /* Base @ of Sector 10, 128 Kbytes */
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#define ADDR_FLASH_SECTOR_11 ((uint32_t)0x080E0000) /* Base @ of Sector 11, 128 Kbytes */
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#endif
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static const uint32_t flash_info_table[26] = {
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ADDR_FLASH_SECTOR_0, FLASH_SECTOR_0,
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ADDR_FLASH_SECTOR_1, FLASH_SECTOR_1,
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ADDR_FLASH_SECTOR_2, FLASH_SECTOR_2,
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ADDR_FLASH_SECTOR_3, FLASH_SECTOR_3,
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ADDR_FLASH_SECTOR_4, FLASH_SECTOR_4,
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ADDR_FLASH_SECTOR_5, FLASH_SECTOR_5,
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ADDR_FLASH_SECTOR_6, FLASH_SECTOR_6,
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ADDR_FLASH_SECTOR_7, FLASH_SECTOR_7,
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#if defined(FLASH_SECTOR_8)
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ADDR_FLASH_SECTOR_8, FLASH_SECTOR_8,
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ADDR_FLASH_SECTOR_9, FLASH_SECTOR_9,
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ADDR_FLASH_SECTOR_10, FLASH_SECTOR_10,
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ADDR_FLASH_SECTOR_11, FLASH_SECTOR_11,
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ADDR_FLASH_SECTOR_11 + 0x20000, 0,
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#else
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ADDR_FLASH_SECTOR_7 + 0x20000, 0,
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#endif
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};
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uint32_t flash_get_sector_info(uint32_t addr, uint32_t *start_addr, uint32_t *size) {
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if (addr >= flash_info_table[0]) {
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for (int i = 0; i < 24; i += 2) {
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if (addr < flash_info_table[i + 2]) {
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if (start_addr != NULL) {
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*start_addr = flash_info_table[i];
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}
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if (size != NULL) {
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*size = flash_info_table[i + 2] - flash_info_table[i];
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}
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return flash_info_table[i + 1];
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}
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}
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}
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return 0;
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}
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void flash_erase(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
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// check there is something to write
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if (num_word32 == 0) {
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return;
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}
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// unlock
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HAL_FLASH_Unlock();
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// Clear pending flags (if any)
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__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
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FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
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// erase the sector(s)
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FLASH_EraseInitTypeDef EraseInitStruct;
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EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
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EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
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EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
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EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
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uint32_t SectorError = 0;
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if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
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// error occurred during sector erase
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HAL_FLASH_Lock(); // lock the flash
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return;
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}
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}
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/*
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// erase the sector using an interrupt
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void flash_erase_it(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
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// check there is something to write
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if (num_word32 == 0) {
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return;
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}
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// unlock
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HAL_FLASH_Unlock();
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// Clear pending flags (if any)
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__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
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FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
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// erase the sector(s)
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FLASH_EraseInitTypeDef EraseInitStruct;
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EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
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EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
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EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
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EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
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if (HAL_FLASHEx_Erase_IT(&EraseInitStruct) != HAL_OK) {
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// error occurred during sector erase
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HAL_FLASH_Lock(); // lock the flash
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return;
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}
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}
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*/
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void flash_write(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
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// program the flash word by word
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for (int i = 0; i < num_word32; i++) {
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if (HAL_FLASH_Program(TYPEPROGRAM_WORD, flash_dest, *src) != HAL_OK) {
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// error occurred during flash write
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HAL_FLASH_Lock(); // lock the flash
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return;
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}
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flash_dest += 4;
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src += 1;
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}
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// lock the flash
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HAL_FLASH_Lock();
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}
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/*
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use erase, then write
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void flash_erase_and_write(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
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// check there is something to write
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if (num_word32 == 0) {
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return;
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}
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// unlock
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HAL_FLASH_Unlock();
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// Clear pending flags (if any)
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__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
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FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
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// erase the sector(s)
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FLASH_EraseInitTypeDef EraseInitStruct;
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EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
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EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
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EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
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EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
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uint32_t SectorError = 0;
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if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
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// error occurred during sector erase
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HAL_FLASH_Lock(); // lock the flash
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return;
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}
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// program the flash word by word
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for (int i = 0; i < num_word32; i++) {
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if (HAL_FLASH_Program(TYPEPROGRAM_WORD, flash_dest, *src) != HAL_OK) {
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// error occurred during flash write
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HAL_FLASH_Lock(); // lock the flash
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return;
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}
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flash_dest += 4;
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src += 1;
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}
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// lock the flash
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HAL_FLASH_Lock();
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}
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*/
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